Delnummer :
BSO615CGHUMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N/P-CH 60V 3.1A/2A 8SOIC
FET Type :
N and P-Channel
FET-funksjon :
Logic Level Gate
Drenering til kildespenning (Vdss) :
60V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
3.1A, 2A
Rds On (Max) @ Id, vgs :
110 mOhm @ 3.1A, 10V
Vgs (th) (Max) @ Id :
2V @ 20µA
Gate Lading (Qg) (Max) @ Vgs :
22.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
380pF @ 25V
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Pakke / sak :
8-SOIC (0.154", 3.90mm Width)
Leverandørenhetspakke :
PG-DSO-8