FQB34N20LTM Priser (USD) [70894stk Lager]
- 1 pcs$0.55429
- 800 pcs$0.55153
- Delnummer:
- FQB34N20LTM
- Produsent:
- ON Semiconductor
- Detaljert beskrivelse:
- MOSFET N-CH 200V 31A D2PAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Singel, Tyristorer - SCR-er - moduler, Transistorer - Bipolar (BJT) - Arrays, Dioder - Bridge likerettere, Dioder - Zener - Arrays, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - FET, MOSFET - Arrays and Tyristorer - SCR ...
- Konkurransefordel:
- We specialize in ON Semiconductor FQB34N20LTM electronic components. FQB34N20LTM can be shipped within 24 hours after order. If you have any demands for FQB34N20LTM, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQB34N20LTM Produktegenskaper
Delnummer :
FQB34N20LTM
Produsent :
ON Semiconductor
Beskrivelse :
MOSFET N-CH 200V 31A D2PAK
Serie :
QFET®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
200V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
5V, 10V
Rds On (Max) @ Id, vgs :
75 mOhm @ 15.5A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
72nC @ 5V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3900pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
3.13W (Ta), 180W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
D²PAK (TO-263AB)
Pakke / sak :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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