IXFH30N60Q Priser (USD) [9141stk Lager]
- 1 pcs$5.21032
- 30 pcs$5.18439
- Delnummer:
- IXFH30N60Q
- Produsent:
- IXYS
- Detaljert beskrivelse:
- MOSFET N-CH 600V 30A TO-247AD.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - moduler, Dioder - RF, Transistorer - FET, MOSFET - En, Transistorer - IGBT-er - Arrays, Tyristorer - SCR-er - moduler, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - Bipolar (BJT) - RF and Transistorer - Bipolar (BJT) - Singel ...
- Konkurransefordel:
- We specialize in IXYS IXFH30N60Q electronic components. IXFH30N60Q can be shipped within 24 hours after order. If you have any demands for IXFH30N60Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFH30N60Q Produktegenskaper
Delnummer :
IXFH30N60Q
Produsent :
IXYS
Beskrivelse :
MOSFET N-CH 600V 30A TO-247AD
Serie :
HiPerFET™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
230 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id :
4.5V @ 4mA
Gate Lading (Qg) (Max) @ Vgs :
125nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4700pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
500W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-247AD (IXFH)
Pakke / sak :
TO-247-3
Siste nytt
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