RCD051N20TL Priser (USD) [421931stk Lager]
- 1 pcs$0.10572
- 2,500 pcs$0.10520
- Delnummer:
- RCD051N20TL
- Produsent:
- Rohm Semiconductor
- Detaljert beskrivelse:
- MOSFET N-CH 200V 5A CPT3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Arrays, Dioder - RF, Transistorer - JFET-er, Transistorer - Bipolar (BJT) - Arrays, Transistorer - spesialformål, Dioder - Bridge likerettere, Transistorer - FET, MOSFET - Arrays and Transistorer - Bipolar (BJT) - Arrays, pre-partisk ...
- Konkurransefordel:
- We specialize in Rohm Semiconductor RCD051N20TL electronic components. RCD051N20TL can be shipped within 24 hours after order. If you have any demands for RCD051N20TL, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RCD051N20TL Produktegenskaper
Delnummer :
RCD051N20TL
Produsent :
Rohm Semiconductor
Beskrivelse :
MOSFET N-CH 200V 5A CPT3
Serie :
-
Delstatus :
Not For New Designs
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
200V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
760 mOhm @ 2.5A, 10V
Vgs (th) (Max) @ Id :
5.25V @ 1mA
Gate Lading (Qg) (Max) @ Vgs :
8.3nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
330pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
850mW (Ta), 20W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
CPT3
Pakke / sak :
TO-252-3, DPak (2 Leads + Tab), SC-63
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