SI7900AEDN-T1-GE3 Priser (USD) [167720stk Lager]
- 1 pcs$0.22053
- 3,000 pcs$0.20708
- Delnummer:
- SI7900AEDN-T1-GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET 2N-CH 20V 6A PPAK 1212-8.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Singel, Transistorer - spesialformål, Transistorer - JFET-er, Tyristorer - DIAC, SIDAC, Transistorer - IGBT-er - singel, Transistorer - IGBT-er - moduler, Power Driver-moduler and Transistorer - Bipolar (BJT) - RF ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SI7900AEDN-T1-GE3 electronic components. SI7900AEDN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7900AEDN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI7900AEDN-T1-GE3 Produktegenskaper
Delnummer :
SI7900AEDN-T1-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET 2N-CH 20V 6A PPAK 1212-8
Serie :
TrenchFET®
Delstatus :
Active
FET Type :
2 N-Channel (Dual) Common Drain
FET-funksjon :
Logic Level Gate
Drenering til kildespenning (Vdss) :
20V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
6A
Rds On (Max) @ Id, vgs :
26 mOhm @ 8.5A, 4.5V
Vgs (th) (Max) @ Id :
900mV @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
-
Kraft - Maks :
1.5W
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Pakke / sak :
PowerPAK® 1212-8 Dual
Leverandørenhetspakke :
PowerPAK® 1212-8 Dual
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