IRFHM8363TRPBF Priser (USD) [242912stk Lager]
- 1 pcs$0.15227
- 4,000 pcs$0.15140
- Delnummer:
- IRFHM8363TRPBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET 2N-CH 30V 11A 8PQFN.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Transistorer - JFET-er, Transistorer - Bipolar (BJT) - Singel, Transistorer - FET, MOSFET - RF, Tyristorer - SCR-er - moduler, Tyristorer - DIAC, SIDAC, Transistorer - FET, MOSFET - Arrays and Transistorer - programmerbar enhet ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRFHM8363TRPBF electronic components. IRFHM8363TRPBF can be shipped within 24 hours after order. If you have any demands for IRFHM8363TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFHM8363TRPBF Produktegenskaper
Delnummer :
IRFHM8363TRPBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET 2N-CH 30V 11A 8PQFN
Serie :
HEXFET®
Delstatus :
Not For New Designs
FET Type :
2 N-Channel (Dual)
FET-funksjon :
Logic Level Gate
Drenering til kildespenning (Vdss) :
30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
11A
Rds On (Max) @ Id, vgs :
14.9 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.35V @ 25µA
Gate Lading (Qg) (Max) @ Vgs :
15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1165pF @ 10V
Kraft - Maks :
2.7W
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Pakke / sak :
8-PowerVDFN
Leverandørenhetspakke :
8-PQFN (3.3x3.3), Power33
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