IRF8113TRPBF Priser (USD) [268593stk Lager]
- 1 pcs$0.13771
- 4,000 pcs$0.13216
- Delnummer:
- IRF8113TRPBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 30V 17.2A 8-SOIC.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - programmerbar enhet, Transistorer - Bipolar (BJT) - Singel, Transistorer - spesialformål, Tyristorer - SCR-er - moduler, Transistorer - Bipolar (BJT) - Arrays, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - FET, MOSFET - Arrays and Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRF8113TRPBF electronic components. IRF8113TRPBF can be shipped within 24 hours after order. If you have any demands for IRF8113TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF8113TRPBF Produktegenskaper
Delnummer :
IRF8113TRPBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 30V 17.2A 8-SOIC
Serie :
HEXFET®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
17.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
5.6 mOhm @ 17.2A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
36nC @ 4.5V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2910pF @ 15V
FET-funksjon :
-
Effektdissipasjon (maks) :
2.5W (Ta)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
8-SO
Pakke / sak :
8-SOIC (0.154", 3.90mm Width)
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