IRF540NLPBF Priser (USD) [56679stk Lager]
- 1 pcs$0.66060
- 10 pcs$0.58701
- 100 pcs$0.46380
- 500 pcs$0.34022
- 1,000 pcs$0.26860
- Delnummer:
- IRF540NLPBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 100V 33A TO-262.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - SCR, Power Driver-moduler, Transistorer - Bipolar (BJT) - Singel, Tyristorer - DIAC, SIDAC, Dioder - RF, Transistorer - FET, MOSFET - RF, Transistorer - Bipolar (BJT) - RF and Transistorer - Bipolar (BJT) - Arrays, pre-partisk ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRF540NLPBF electronic components. IRF540NLPBF can be shipped within 24 hours after order. If you have any demands for IRF540NLPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF540NLPBF Produktegenskaper
Delnummer :
IRF540NLPBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 100V 33A TO-262
Serie :
HEXFET®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
44 mOhm @ 16A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
71nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1960pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
130W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-262
Pakke / sak :
TO-262-3 Long Leads, I²Pak, TO-262AA
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