IPS65R600E6AKMA1 Priser (USD) [127686stk Lager]
- 1 pcs$0.28968
- 1,500 pcs$0.26580
- Delnummer:
- IPS65R600E6AKMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 650V TO-251-3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - En, Dioder - likerettere - singel, Transistorer - FET, MOSFET - Arrays, Dioder - RF, Dioder - Bridge likerettere, Transistorer - FET, MOSFET - RF, Tyristorer - TRIAC and Tyristorer - SCR-er - moduler ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPS65R600E6AKMA1 electronic components. IPS65R600E6AKMA1 can be shipped within 24 hours after order. If you have any demands for IPS65R600E6AKMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPS65R600E6AKMA1 Produktegenskaper
Delnummer :
IPS65R600E6AKMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 650V TO-251-3
Serie :
CoolMOS™ E6
Delstatus :
Not For New Designs
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
650V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
600 mOhm @ 2.1A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 210µA
Gate Lading (Qg) (Max) @ Vgs :
23nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
440pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
63W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
PG-TO251-3
Pakke / sak :
TO-251-3 Stub Leads, IPak
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