BSZ084N08NS5ATMA1 Priser (USD) [166294stk Lager]
- 1 pcs$0.22242
- 5,000 pcs$0.20402
- Delnummer:
- BSZ084N08NS5ATMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 80V 40A 8TSDSON.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Arrays, Transistorer - FET, MOSFET - Arrays, Tyristorer - SCR-er - moduler, Transistorer - Bipolar (BJT) - Arrays, Power Driver-moduler, Transistorer - IGBT-er - singel, Dioder - likerettere - matriser and Dioder - likerettere - singel ...
- Konkurransefordel:
- We specialize in Infineon Technologies BSZ084N08NS5ATMA1 electronic components. BSZ084N08NS5ATMA1 can be shipped within 24 hours after order. If you have any demands for BSZ084N08NS5ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSZ084N08NS5ATMA1 Produktegenskaper
Delnummer :
BSZ084N08NS5ATMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 80V 40A 8TSDSON
Serie :
OptiMOS™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
80V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, vgs :
8.4 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
3.8V @ 31µA
Gate Lading (Qg) (Max) @ Vgs :
25nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1820pF @ 40V
FET-funksjon :
-
Effektdissipasjon (maks) :
63W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PG-TSDSON-8-FL
Pakke / sak :
8-PowerTDFN
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