RS1P600BETB1 Priser (USD) [76290stk Lager]
- 1 pcs$0.51252
- Delnummer:
- RS1P600BETB1
- Produsent:
- Rohm Semiconductor
- Detaljert beskrivelse:
- RS1P600BE IS A POWER MOSFET WITH.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - singel, Dioder - Zener - Arrays, Transistorer - IGBT-er - Arrays, Dioder - likerettere - singel, Dioder - Bridge likerettere, Transistorer - Bipolar (BJT) - Arrays, Transistorer - IGBT-er - moduler and Dioder - likerettere - matriser ...
- Konkurransefordel:
- We specialize in Rohm Semiconductor RS1P600BETB1 electronic components. RS1P600BETB1 can be shipped within 24 hours after order. If you have any demands for RS1P600BETB1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RS1P600BETB1 Produktegenskaper
Delnummer :
RS1P600BETB1
Produsent :
Rohm Semiconductor
Beskrivelse :
RS1P600BE IS A POWER MOSFET WITH
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
17.5A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
9.7 mOhm @ 17.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 500µA
Gate Lading (Qg) (Max) @ Vgs :
33nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2200pF @ 50V
FET-funksjon :
-
Effektdissipasjon (maks) :
3W (Ta), 35W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
8-HSOP
Pakke / sak :
8-PowerTDFN
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