TSM60NB190CM2 RNG Priser (USD) [62761stk Lager]
- 1 pcs$0.62301
- Delnummer:
- TSM60NB190CM2 RNG
- Produsent:
- Taiwan Semiconductor Corporation
- Detaljert beskrivelse:
- MOSFET N-CH 600V 18A TO263.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - JFET-er, Transistorer - FET, MOSFET - RF, Transistorer - programmerbar enhet, Transistorer - spesialformål, Transistorer - IGBT-er - Arrays, Transistorer - Bipolar (BJT) - Arrays, Transistorer - Bipolar (BJT) - Singel and Power Driver-moduler ...
- Konkurransefordel:
- We specialize in Taiwan Semiconductor Corporation TSM60NB190CM2 RNG electronic components. TSM60NB190CM2 RNG can be shipped within 24 hours after order. If you have any demands for TSM60NB190CM2 RNG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM60NB190CM2 RNG Produktegenskaper
Delnummer :
TSM60NB190CM2 RNG
Produsent :
Taiwan Semiconductor Corporation
Beskrivelse :
MOSFET N-CH 600V 18A TO263
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
190 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
31nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1273pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
150.6W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
TO-263 (D²Pak)
Pakke / sak :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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