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- Delnummer:
- IRF6691TR1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 20V 32A DIRECTFET.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Arrays, Tyristorer - SCR-er - moduler, Transistorer - Bipolar (BJT) - Singel, Transistorer - Bipolar (BJT) - RF, Transistorer - FET, MOSFET - En, Transistorer - IGBT-er - Arrays, Dioder - likerettere - singel and Dioder - RF ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRF6691TR1 electronic components. IRF6691TR1 can be shipped within 24 hours after order. If you have any demands for IRF6691TR1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6691TR1 Produktegenskaper
Delnummer :
IRF6691TR1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 20V 32A DIRECTFET
Serie :
HEXFET®
Delstatus :
Obsolete
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
20V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
32A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
1.8 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
71nC @ 4.5V
Vgs (maks) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
6580pF @ 10V
FET-funksjon :
-
Effektdissipasjon (maks) :
2.8W (Ta), 89W (Tc)
Driftstemperatur :
-40°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
DIRECTFET™ MT
Pakke / sak :
DirectFET™ Isometric MT
Siste nytt
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