IPN60R3K4CEATMA1 Priser (USD) [514616stk Lager]
- 1 pcs$0.07187
- 3,000 pcs$0.06317
- Delnummer:
- IPN60R3K4CEATMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET NCH 600V 2.6A SOT223.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Power Driver-moduler, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - IGBT-er - moduler, Transistorer - FET, MOSFET - En, Transistorer - programmerbar enhet, Tyristorer - TRIAC, Dioder - Bridge likerettere and Transistorer - IGBT-er - singel ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPN60R3K4CEATMA1 electronic components. IPN60R3K4CEATMA1 can be shipped within 24 hours after order. If you have any demands for IPN60R3K4CEATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPN60R3K4CEATMA1 Produktegenskaper
Delnummer :
IPN60R3K4CEATMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET NCH 600V 2.6A SOT223
Serie :
CoolMOS™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
3.4 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
3.5V @ 40µA
Gate Lading (Qg) (Max) @ Vgs :
4.6nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
93pF @ 100V
FET-funksjon :
Super Junction
Effektdissipasjon (maks) :
5W (Tc)
Driftstemperatur :
-40°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PG-SOT223
Pakke / sak :
SOT-223-3
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