RQ1E100XNTR Priser (USD) [247410stk Lager]
- 1 pcs$0.16527
- 3,000 pcs$0.16445
- Delnummer:
- RQ1E100XNTR
- Produsent:
- Rohm Semiconductor
- Detaljert beskrivelse:
- MOSFET N-CH 30V 10A TSMT8.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - RF, Transistorer - JFET-er, Tyristorer - SCR, Transistorer - IGBT-er - Arrays, Transistorer - IGBT-er - moduler, Transistorer - IGBT-er - singel, Transistorer - spesialformål and Transistorer - FET, MOSFET - RF ...
- Konkurransefordel:
- We specialize in Rohm Semiconductor RQ1E100XNTR electronic components. RQ1E100XNTR can be shipped within 24 hours after order. If you have any demands for RQ1E100XNTR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RQ1E100XNTR Produktegenskaper
Delnummer :
RQ1E100XNTR
Produsent :
Rohm Semiconductor
Beskrivelse :
MOSFET N-CH 30V 10A TSMT8
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4V, 10V
Rds On (Max) @ Id, vgs :
10.5 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Gate Lading (Qg) (Max) @ Vgs :
12.7nC @ 5V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1000pF @ 10V
FET-funksjon :
-
Effektdissipasjon (maks) :
550mW (Ta)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
TSMT8
Pakke / sak :
8-SMD, Flat Lead
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