TPN22006NH,LQ Priser (USD) [293170stk Lager]
- 1 pcs$0.13947
- 3,000 pcs$0.13878
- Delnummer:
- TPN22006NH,LQ
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET N CH 60V 9A 8-TSON.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - RF, Transistorer - FET, MOSFET - RF, Transistorer - JFET-er, Dioder - Zener - Singel, Power Driver-moduler, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - FET, MOSFET - Arrays and Transistorer - IGBT-er - Arrays ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TPN22006NH,LQ electronic components. TPN22006NH,LQ can be shipped within 24 hours after order. If you have any demands for TPN22006NH,LQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPN22006NH,LQ Produktegenskaper
Delnummer :
TPN22006NH,LQ
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N CH 60V 9A 8-TSON
Serie :
U-MOSVIII-H
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
60V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
6.5V, 10V
Rds On (Max) @ Id, vgs :
22 mOhm @ 4.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 100µA
Gate Lading (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
710pF @ 30V
FET-funksjon :
-
Effektdissipasjon (maks) :
700mW (Ta), 18W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
8-TSON Advance (3.3x3.3)
Pakke / sak :
8-PowerVDFN
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