IPP60R190P6XKSA1 Priser (USD) [28953stk Lager]
- 1 pcs$1.42346
- Delnummer:
- IPP60R190P6XKSA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 600V 20.2A TO220.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Power Driver-moduler, Transistorer - IGBT-er - singel, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - FET, MOSFET - Arrays, Tyristorer - SCR-er - moduler, Dioder - Bridge likerettere, Transistorer - IGBT-er - Arrays and Dioder - RF ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPP60R190P6XKSA1 electronic components. IPP60R190P6XKSA1 can be shipped within 24 hours after order. If you have any demands for IPP60R190P6XKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPP60R190P6XKSA1 Produktegenskaper
Delnummer :
IPP60R190P6XKSA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 600V 20.2A TO220
Serie :
CoolMOS™ P6
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
190 mOhm @ 7.6A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 630µ
Gate Lading (Qg) (Max) @ Vgs :
11nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1750pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
151W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
PG-TO220-3
Pakke / sak :
TO-220-3
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