IPI65R150CFDXKSA1 Priser (USD) [2453stk Lager]
- 500 pcs$0.92744
- Delnummer:
- IPI65R150CFDXKSA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 650V 22.4A TO-262.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Transistorer - IGBT-er - Arrays, Transistorer - JFET-er, Dioder - Zener - Singel, Dioder - likerettere - matriser, Dioder - Zener - Arrays, Transistorer - FET, MOSFET - Arrays and Tyristorer - TRIAC ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPI65R150CFDXKSA1 electronic components. IPI65R150CFDXKSA1 can be shipped within 24 hours after order. If you have any demands for IPI65R150CFDXKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPI65R150CFDXKSA1 Produktegenskaper
Delnummer :
IPI65R150CFDXKSA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 650V 22.4A TO-262
Serie :
CoolMOS™
Delstatus :
Obsolete
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
650V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
22.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
150 mOhm @ 9.3A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 900µA
Gate Lading (Qg) (Max) @ Vgs :
86nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2340pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
195.3W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
PG-TO262-3-1
Pakke / sak :
TO-262-3 Long Leads, I²Pak, TO-262AA
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