STD8N60DM2 Priser (USD) [131849stk Lager]
- 1 pcs$0.28053
- 2,500 pcs$0.24972
- Delnummer:
- STD8N60DM2
- Produsent:
- STMicroelectronics
- Detaljert beskrivelse:
- N-CHANNEL 600 V 0.26 OHM TYP..
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Bridge likerettere, Transistorer - JFET-er, Transistorer - Bipolar (BJT) - Singel, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - FET, MOSFET - Arrays, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - IGBT-er - Arrays and Dioder - RF ...
- Konkurransefordel:
- We specialize in STMicroelectronics STD8N60DM2 electronic components. STD8N60DM2 can be shipped within 24 hours after order. If you have any demands for STD8N60DM2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STD8N60DM2 Produktegenskaper
Delnummer :
STD8N60DM2
Produsent :
STMicroelectronics
Beskrivelse :
N-CHANNEL 600 V 0.26 OHM TYP.
Serie :
MDmesh™ DM2
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
600 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id :
5V @ 100µA
Gate Lading (Qg) (Max) @ Vgs :
13.5nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
375pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
85W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
DPAK
Pakke / sak :
TO-252-3, DPak (2 Leads + Tab), SC-63
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