Delnummer :
IPB60R385CPATMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 600V 9A TO-263
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
385 mOhm @ 5.2A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 340µA
Gate Lading (Qg) (Max) @ Vgs :
22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
790pF @ 100V
Effektdissipasjon (maks) :
83W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PG-TO263-3-2
Pakke / sak :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB