SQ1912EH-T1_GE3 Priser (USD) [610452stk Lager]
- 1 pcs$0.06059
- 3,000 pcs$0.05168
- Delnummer:
- SQ1912EH-T1_GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET 2 N-CH 20V 800MA SC70-6.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Singel, Power Driver-moduler, Dioder - RF, Tyristorer - TRIAC, Transistorer - IGBT-er - Arrays, Dioder - Bridge likerettere, Transistorer - FET, MOSFET - En and Dioder - Variabel kapasitet (Varicaps, Varactors) ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SQ1912EH-T1_GE3 electronic components. SQ1912EH-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ1912EH-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQ1912EH-T1_GE3 Produktegenskaper
Delnummer :
SQ1912EH-T1_GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET 2 N-CH 20V 800MA SC70-6
Serie :
Automotive, AEC-Q101, TrenchFET®
Delstatus :
Active
FET Type :
2 N-Channel (Dual)
FET-funksjon :
Standard
Drenering til kildespenning (Vdss) :
20V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
800mA (Tc)
Rds On (Max) @ Id, vgs :
280 mOhm @ 1.2A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
1.15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
75pF @ 10V
Kraft - Maks :
1.5W
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Pakke / sak :
6-TSSOP, SC-88, SOT-363
Leverandørenhetspakke :
SC-70-6
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