SIA813DJ-T1-GE3 Priser (USD) [262736stk Lager]
- 1 pcs$0.14078
- 3,000 pcs$0.13247
- Delnummer:
- SIA813DJ-T1-GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET P-CH 20V 4.5A SC70-6.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - RF, Transistorer - JFET-er, Power Driver-moduler, Transistorer - IGBT-er - Arrays, Transistorer - IGBT-er - moduler, Tyristorer - DIAC, SIDAC, Transistorer - Bipolar (BJT) - Arrays and Dioder - Zener - Singel ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SIA813DJ-T1-GE3 electronic components. SIA813DJ-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIA813DJ-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIA813DJ-T1-GE3 Produktegenskaper
Delnummer :
SIA813DJ-T1-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET P-CH 20V 4.5A SC70-6
Serie :
LITTLE FOOT®
Delstatus :
Active
FET Type :
P-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
20V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, vgs :
94 mOhm @ 2.8A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
13nC @ 8V
Vgs (maks) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
355pF @ 10V
FET-funksjon :
Schottky Diode (Isolated)
Effektdissipasjon (maks) :
1.9W (Ta), 6.5W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PowerPAK® SC-70-6 Dual
Pakke / sak :
PowerPAK® SC-70-6 Dual
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