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- Delnummer:
- IRF6629TRPBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 25V 29A DIRECTFET.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Singel, Tyristorer - SCR, Tyristorer - DIAC, SIDAC, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - Bipolar (BJT) - Arrays, Dioder - RF, Dioder - Zener - Arrays and Transistorer - IGBT-er - singel ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRF6629TRPBF electronic components. IRF6629TRPBF can be shipped within 24 hours after order. If you have any demands for IRF6629TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6629TRPBF Produktegenskaper
Delnummer :
IRF6629TRPBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 25V 29A DIRECTFET
Serie :
HEXFET®
Delstatus :
Obsolete
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
25V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
29A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
2.1 mOhm @ 29A, 10V
Vgs (th) (Max) @ Id :
2.35V @ 100µA
Gate Lading (Qg) (Max) @ Vgs :
51nC @ 4.5V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4260pF @ 13V
FET-funksjon :
-
Effektdissipasjon (maks) :
2.8W (Ta), 100W (Tc)
Driftstemperatur :
-40°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
DIRECTFET™ MX
Pakke / sak :
DirectFET™ Isometric MX
Siste nytt
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