IRF3710ZLPBF Priser (USD) [53136stk Lager]
- 1 pcs$0.67732
- 10 pcs$0.59872
- 100 pcs$0.47325
- 500 pcs$0.34717
- 1,000 pcs$0.27408
- Delnummer:
- IRF3710ZLPBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 100V 59A TO-262.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Singel, Tyristorer - SCR-er - moduler, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Dioder - likerettere - matriser, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - FET, MOSFET - Arrays, Dioder - likerettere - singel and Dioder - Zener - Singel ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRF3710ZLPBF electronic components. IRF3710ZLPBF can be shipped within 24 hours after order. If you have any demands for IRF3710ZLPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF3710ZLPBF Produktegenskaper
Delnummer :
IRF3710ZLPBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 100V 59A TO-262
Serie :
HEXFET®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
18 mOhm @ 35A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
120nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2900pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
160W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-262
Pakke / sak :
TO-262-3 Long Leads, I²Pak, TO-262AA
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