IPP65R125C7XKSA1 Priser (USD) [18969stk Lager]
- 1 pcs$2.34452
- 10 pcs$2.09156
- 100 pcs$1.71498
- 500 pcs$1.38870
- 1,000 pcs$1.17120
- Delnummer:
- IPP65R125C7XKSA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 650V 18A TO220.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - RF, Transistorer - Bipolar (BJT) - Singel, Power Driver-moduler, Transistorer - Bipolar (BJT) - RF, Transistorer - IGBT-er - singel, Tyristorer - DIAC, SIDAC, Transistorer - JFET-er and Transistorer - programmerbar enhet ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPP65R125C7XKSA1 electronic components. IPP65R125C7XKSA1 can be shipped within 24 hours after order. If you have any demands for IPP65R125C7XKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPP65R125C7XKSA1 Produktegenskaper
Delnummer :
IPP65R125C7XKSA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 650V 18A TO220
Serie :
CoolMOS™ C7
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
650V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
125 mOhm @ 8.9A, 10V
Vgs (th) (Max) @ Id :
4V @ 440µA
Gate Lading (Qg) (Max) @ Vgs :
35nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1670pF @ 400V
FET-funksjon :
-
Effektdissipasjon (maks) :
101W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
PG-TO220-3
Pakke / sak :
TO-220-3
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