SQSA80ENW-T1_GE3 Priser (USD) [194426stk Lager]
- 1 pcs$0.19024
- 3,000 pcs$0.16079
- Delnummer:
- SQSA80ENW-T1_GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET N-CH 80V 18A POWERPAK1212.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - JFET-er, Transistorer - programmerbar enhet, Transistorer - Bipolar (BJT) - RF, Dioder - RF, Transistorer - FET, MOSFET - En, Tyristorer - DIAC, SIDAC and Dioder - Zener - Singel ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SQSA80ENW-T1_GE3 electronic components. SQSA80ENW-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQSA80ENW-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQSA80ENW-T1_GE3 Produktegenskaper
Delnummer :
SQSA80ENW-T1_GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N-CH 80V 18A POWERPAK1212
Serie :
Automotive, AEC-Q101, TrenchFET®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
80V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
21 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
21nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1358pF @ 40V
FET-funksjon :
-
Effektdissipasjon (maks) :
62.5W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PowerPAK® 1212-8
Pakke / sak :
PowerPAK® 1212-8
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