GA10SICP12-263 Priser (USD) [3349stk Lager]
- 1 pcs$19.21305
- 10 pcs$17.77033
- 25 pcs$16.32929
- 100 pcs$15.17669
- Delnummer:
- GA10SICP12-263
- Produsent:
- GeneSiC Semiconductor
- Detaljert beskrivelse:
- TRANS SJT 1200V 25A TO263-7.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - RF, Transistorer - programmerbar enhet, Transistorer - IGBT-er - Arrays, Transistorer - IGBT-er - singel, Transistorer - Bipolar (BJT) - Arrays, Dioder - Variabel kapasitet (Varicaps, Varactors), Tyristorer - SCR and Transistorer - Bipolar (BJT) - Singel ...
- Konkurransefordel:
- We specialize in GeneSiC Semiconductor GA10SICP12-263 electronic components. GA10SICP12-263 can be shipped within 24 hours after order. If you have any demands for GA10SICP12-263, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GA10SICP12-263 Produktegenskaper
Delnummer :
GA10SICP12-263
Produsent :
GeneSiC Semiconductor
Beskrivelse :
TRANS SJT 1200V 25A TO263-7
Serie :
-
Delstatus :
Active
FET Type :
-
Teknologi :
SiC (Silicon Carbide Junction Transistor)
Drenering til kildespenning (Vdss) :
1200V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, vgs :
100 mOhm @ 10A
Vgs (th) (Max) @ Id :
-
Gate Lading (Qg) (Max) @ Vgs :
-
Vgs (maks) :
-
Input Capacitance (Ciss) (Max) @ Vds :
1403pF @ 800V
FET-funksjon :
-
Effektdissipasjon (maks) :
170W (Tc)
Driftstemperatur :
175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
D2PAK (7-Lead)
Pakke / sak :
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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