AUIRFN7107TR Priser (USD) [3001stk Lager]
- 4,000 pcs$0.45945
- Delnummer:
- AUIRFN7107TR
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 75V 75A 8PQFN.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Bridge likerettere, Transistorer - IGBT-er - singel, Transistorer - Bipolar (BJT) - Arrays, Transistorer - IGBT-er - moduler, Dioder - RF, Transistorer - Bipolar (BJT) - RF, Dioder - Zener - Singel and Power Driver-moduler ...
- Konkurransefordel:
- We specialize in Infineon Technologies AUIRFN7107TR electronic components. AUIRFN7107TR can be shipped within 24 hours after order. If you have any demands for AUIRFN7107TR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
AUIRFN7107TR Produktegenskaper
Delnummer :
AUIRFN7107TR
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 75V 75A 8PQFN
Serie :
HEXFET®
Delstatus :
Obsolete
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
75V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
14A (Ta), 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
8.5 mOhm @ 45A, 10V
Vgs (th) (Max) @ Id :
4V @ 100µA
Gate Lading (Qg) (Max) @ Vgs :
77nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3001pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
4.4W (Ta), 125W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PQFN (5x6)
Pakke / sak :
8-PowerTDFN
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