TK8A60W,S4VX Priser (USD) [43497stk Lager]
- 1 pcs$0.99375
- 50 pcs$0.98881
- Delnummer:
- TK8A60W,S4VX
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET N CH 600V 8A TO-220SIS.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Tyristorer - DIAC, SIDAC, Transistorer - Bipolar (BJT) - Singel, Transistorer - FET, MOSFET - Arrays, Transistorer - JFET-er, Dioder - Zener - Singel, Dioder - RF and Transistorer - programmerbar enhet ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TK8A60W,S4VX electronic components. TK8A60W,S4VX can be shipped within 24 hours after order. If you have any demands for TK8A60W,S4VX, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK8A60W,S4VX Produktegenskaper
Delnummer :
TK8A60W,S4VX
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N CH 600V 8A TO-220SIS
Serie :
DTMOSIV
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
500 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 400µA
Gate Lading (Qg) (Max) @ Vgs :
18.5nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
570pF @ 300V
FET-funksjon :
Super Junction
Effektdissipasjon (maks) :
30W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-220SIS
Pakke / sak :
TO-220-3 Full Pack
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