Infineon Technologies - IPS80R2K0P7AKMA1

KEY Part #: K6400579

IPS80R2K0P7AKMA1 Priser (USD) [96413stk Lager]

  • 1 pcs$0.42646
  • 10 pcs$0.37880
  • 100 pcs$0.28310
  • 500 pcs$0.21954
  • 1,000 pcs$0.17332

Delnummer:
IPS80R2K0P7AKMA1
Produsent:
Infineon Technologies
Detaljert beskrivelse:
MOSFET N-CH 800V 3A TO251-3.
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - singel, Transistorer - JFET-er, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Dioder - Zener - Singel, Tyristorer - TRIAC, Tyristorer - SCR, Dioder - Zener - Arrays and Transistorer - Bipolar (BJT) - Singel ...
Konkurransefordel:
We specialize in Infineon Technologies IPS80R2K0P7AKMA1 electronic components. IPS80R2K0P7AKMA1 can be shipped within 24 hours after order. If you have any demands for IPS80R2K0P7AKMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPS80R2K0P7AKMA1 Produktegenskaper

Delnummer : IPS80R2K0P7AKMA1
Produsent : Infineon Technologies
Beskrivelse : MOSFET N-CH 800V 3A TO251-3
Serie : CoolMOS™ P7
Delstatus : Active
FET Type : N-Channel
Teknologi : MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) : 800V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, vgs : 2 Ohm @ 940mA, 10V
Vgs (th) (Max) @ Id : 3.5V @ 50µA
Gate Lading (Qg) (Max) @ Vgs : 9nC @ 10V
Vgs (maks) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 175pF @ 500V
FET-funksjon : -
Effektdissipasjon (maks) : 24W (Tc)
Driftstemperatur : -55°C ~ 150°C (TJ)
Monteringstype : Through Hole
Leverandørenhetspakke : PG-TO251-3
Pakke / sak : TO-251-3 Stub Leads, IPak