IRFZ46NLPBF Priser (USD) [163105stk Lager]
- 1 pcs$0.53517
- 10 pcs$0.47580
- 100 pcs$0.37591
- 500 pcs$0.27575
- 1,000 pcs$0.21770
- Delnummer:
- IRFZ46NLPBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 55V 53A TO-262.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - JFET-er, Tyristorer - SCR, Transistorer - FET, MOSFET - Arrays, Tyristorer - DIAC, SIDAC, Transistorer - IGBT-er - moduler, Transistorer - Bipolar (BJT) - Singel, Transistorer - IGBT-er - Arrays and Dioder - Bridge likerettere ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRFZ46NLPBF electronic components. IRFZ46NLPBF can be shipped within 24 hours after order. If you have any demands for IRFZ46NLPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFZ46NLPBF Produktegenskaper
Delnummer :
IRFZ46NLPBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 55V 53A TO-262
Serie :
HEXFET®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
55V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
53A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
16.5 mOhm @ 28A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
72nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1696pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
3.8W (Ta), 107W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-262
Pakke / sak :
TO-262-3 Long Leads, I²Pak, TO-262AA
Siste nytt
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