TSM900N10CH X0G Priser (USD) [133600stk Lager]
- 1 pcs$0.27685
- Delnummer:
- TSM900N10CH X0G
- Produsent:
- Taiwan Semiconductor Corporation
- Detaljert beskrivelse:
- MOSFET N-CH 100V 15A TO251.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - RF, Transistorer - Bipolar (BJT) - Arrays, Transistorer - IGBT-er - moduler, Transistorer - FET, MOSFET - En, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Tyristorer - SCR-er - moduler, Tyristorer - TRIAC and Dioder - Variabel kapasitet (Varicaps, Varactors) ...
- Konkurransefordel:
- We specialize in Taiwan Semiconductor Corporation TSM900N10CH X0G electronic components. TSM900N10CH X0G can be shipped within 24 hours after order. If you have any demands for TSM900N10CH X0G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM900N10CH X0G Produktegenskaper
Delnummer :
TSM900N10CH X0G
Produsent :
Taiwan Semiconductor Corporation
Beskrivelse :
MOSFET N-CH 100V 15A TO251
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
90 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
9.3nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1480pF @ 50V
FET-funksjon :
-
Effektdissipasjon (maks) :
50W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-251 (IPAK)
Pakke / sak :
TO-251-3 Stub Leads, IPak
Siste nytt
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