IRFR3411PBF Priser (USD) [13541stk Lager]
- 3,000 pcs$0.27250
- Delnummer:
- IRFR3411PBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 100V 32A DPAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - spesialformål, Dioder - Bridge likerettere, Transistorer - Bipolar (BJT) - Singel, Transistorer - FET, MOSFET - RF, Power Driver-moduler, Transistorer - IGBT-er - moduler, Transistorer - programmerbar enhet and Transistorer - IGBT-er - Arrays ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRFR3411PBF electronic components. IRFR3411PBF can be shipped within 24 hours after order. If you have any demands for IRFR3411PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFR3411PBF Produktegenskaper
Delnummer :
IRFR3411PBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 100V 32A DPAK
Serie :
HEXFET®
Delstatus :
Discontinued at Digi-Key
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
44 mOhm @ 16A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
71nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1960pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
130W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
D-Pak
Pakke / sak :
TO-252-3, DPak (2 Leads + Tab), SC-63
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