RJK6012DPE-00#J3 Priser (USD) [2176stk Lager]
- 1,000 pcs$0.67884
- Delnummer:
- RJK6012DPE-00#J3
- Produsent:
- Renesas Electronics America
- Detaljert beskrivelse:
- MOSFET N-CH 600V 10A LDPAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - En, Transistorer - IGBT-er - singel, Transistorer - programmerbar enhet, Power Driver-moduler, Transistorer - Bipolar (BJT) - RF, Transistorer - JFET-er, Transistorer - IGBT-er - moduler and Transistorer - Bipolar (BJT) - Arrays ...
- Konkurransefordel:
- We specialize in Renesas Electronics America RJK6012DPE-00#J3 electronic components. RJK6012DPE-00#J3 can be shipped within 24 hours after order. If you have any demands for RJK6012DPE-00#J3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RJK6012DPE-00#J3 Produktegenskaper
Delnummer :
RJK6012DPE-00#J3
Produsent :
Renesas Electronics America
Beskrivelse :
MOSFET N-CH 600V 10A LDPAK
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
920 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
-
Gate Lading (Qg) (Max) @ Vgs :
30nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1100pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
100W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
4-LDPAK
Pakke / sak :
SC-83
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