IRF1310NSPBF Priser (USD) [13605stk Lager]
- 1,000 pcs$0.37392
- Delnummer:
- IRF1310NSPBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 100V 42A D2PAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - likerettere - matriser, Dioder - Zener - Singel, Dioder - Zener - Arrays, Power Driver-moduler, Transistorer - Bipolar (BJT) - Singel, Transistorer - FET, MOSFET - En, Transistorer - Bipolar (BJT) - RF and Transistorer - FET, MOSFET - RF ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRF1310NSPBF electronic components. IRF1310NSPBF can be shipped within 24 hours after order. If you have any demands for IRF1310NSPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF1310NSPBF Produktegenskaper
Delnummer :
IRF1310NSPBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 100V 42A D2PAK
Serie :
HEXFET®
Delstatus :
Discontinued at Digi-Key
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
36 mOhm @ 22A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
110nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1900pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
3.8W (Ta), 160W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
D2PAK
Pakke / sak :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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