IRFI830GPBF Priser (USD) [47232stk Lager]
- 1 pcs$0.82784
- 10 pcs$0.74673
- 100 pcs$0.60018
- 500 pcs$0.46681
- 1,000 pcs$0.38678
- Delnummer:
- IRFI830GPBF
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET N-CH 500V 3.1A TO220FP.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - RF, Power Driver-moduler, Dioder - Zener - Singel, Dioder - Bridge likerettere, Transistorer - spesialformål, Dioder - RF, Transistorer - Bipolar (BJT) - Arrays and Transistorer - FET, MOSFET - En ...
- Konkurransefordel:
- We specialize in Vishay Siliconix IRFI830GPBF electronic components. IRFI830GPBF can be shipped within 24 hours after order. If you have any demands for IRFI830GPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFI830GPBF Produktegenskaper
Delnummer :
IRFI830GPBF
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N-CH 500V 3.1A TO220FP
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
500V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
1.5 Ohm @ 1.9A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
38nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
610pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
35W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-220-3
Pakke / sak :
TO-220-3 Full Pack, Isolated Tab
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