SI4866DY-T1-GE3 Priser (USD) [83104stk Lager]
- 1 pcs$0.47051
- 2,500 pcs$0.44082
- Delnummer:
- SI4866DY-T1-GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET N-CH 12V 11A 8-SOIC.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - RF, Transistorer - IGBT-er - singel, Transistorer - Bipolar (BJT) - Singel, Transistorer - programmerbar enhet, Transistorer - FET, MOSFET - Arrays, Transistorer - IGBT-er - Arrays, Tyristorer - SCR and Dioder - likerettere - singel ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SI4866DY-T1-GE3 electronic components. SI4866DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4866DY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4866DY-T1-GE3 Produktegenskaper
Delnummer :
SI4866DY-T1-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N-CH 12V 11A 8-SOIC
Serie :
TrenchFET®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
12V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, vgs :
5.5 mOhm @ 17A, 4.5V
Vgs (th) (Max) @ Id :
600mV @ 250µA (Min)
Gate Lading (Qg) (Max) @ Vgs :
30nC @ 4.5V
Vgs (maks) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
-
FET-funksjon :
-
Effektdissipasjon (maks) :
1.6W (Ta)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
8-SO
Pakke / sak :
8-SOIC (0.154", 3.90mm Width)
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