SIZ200DT-T1-GE3 Priser (USD) [192003stk Lager]
- 1 pcs$0.19264
- Delnummer:
- SIZ200DT-T1-GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET N-CH DUAL 30V.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Singel, Power Driver-moduler, Dioder - Bridge likerettere, Transistorer - IGBT-er - moduler, Transistorer - Bipolar (BJT) - RF, Transistorer - Bipolar (BJT) - Singel, Transistorer - JFET-er and Transistorer - IGBT-er - Arrays ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SIZ200DT-T1-GE3 electronic components. SIZ200DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZ200DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZ200DT-T1-GE3 Produktegenskaper
Delnummer :
SIZ200DT-T1-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N-CH DUAL 30V
Serie :
TrenchFET® Gen IV
Delstatus :
Active
FET Type :
2 N-Channel (Dual)
FET-funksjon :
Standard
Drenering til kildespenning (Vdss) :
30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
Rds On (Max) @ Id, vgs :
5.5 mOhm @ 10A, 10V, 5.8 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
28nC @ 10V, 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1510pF @ 15V, 1600pF @ 15V
Kraft - Maks :
4.3W (Ta), 33W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Pakke / sak :
8-PowerWDFN
Leverandørenhetspakke :
8-PowerPair® (3.3x3.3)
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