SI4564DY-T1-GE3 Priser (USD) [142562stk Lager]
- 1 pcs$0.25945
- 2,500 pcs$0.24363
- Delnummer:
- SI4564DY-T1-GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET N/P-CH 40V 10A 8SOIC.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - FET, MOSFET - RF, Dioder - Zener - Arrays, Transistorer - Bipolar (BJT) - Arrays, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - JFET-er, Dioder - likerettere - matriser and Transistorer - FET, MOSFET - En ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SI4564DY-T1-GE3 electronic components. SI4564DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4564DY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4564DY-T1-GE3 Produktegenskaper
Delnummer :
SI4564DY-T1-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N/P-CH 40V 10A 8SOIC
Serie :
TrenchFET®
Delstatus :
Active
FET Type :
N and P-Channel
FET-funksjon :
Logic Level Gate
Drenering til kildespenning (Vdss) :
40V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
10A, 9.2A
Rds On (Max) @ Id, vgs :
17.5 mOhm @ 8A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
31nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
855pF @ 20V
Kraft - Maks :
3.1W, 3.2W
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Pakke / sak :
8-SOIC (0.154", 3.90mm Width)
Leverandørenhetspakke :
8-SO
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