TK7J90E,S1E Priser (USD) [34636stk Lager]
- 1 pcs$1.30888
- 25 pcs$1.00143
- 100 pcs$0.90130
- 500 pcs$0.70102
- 1,000 pcs$0.58085
- Delnummer:
- TK7J90E,S1E
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET N-CH 900V TO-3PN.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - RF, Dioder - Variabel kapasitet (Varicaps, Varactors), Dioder - likerettere - singel, Transistorer - Bipolar (BJT) - Singel, Transistorer - Bipolar (BJT) - Arrays, Transistorer - FET, MOSFET - En, Transistorer - IGBT-er - moduler and Dioder - Zener - Arrays ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TK7J90E,S1E electronic components. TK7J90E,S1E can be shipped within 24 hours after order. If you have any demands for TK7J90E,S1E, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK7J90E,S1E Produktegenskaper
Delnummer :
TK7J90E,S1E
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N-CH 900V TO-3PN
Serie :
π-MOSVIII
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
900V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
2 Ohm @ 3.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 700µA
Gate Lading (Qg) (Max) @ Vgs :
32nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1350pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
200W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-3P(N)
Pakke / sak :
TO-3P-3, SC-65-3
Siste nytt
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