IXFH20N85X Priser (USD) [13455stk Lager]
- 1 pcs$3.95308
- 10 pcs$3.55601
- 100 pcs$2.92365
- 500 pcs$2.44954
- 1,000 pcs$2.13347
- Delnummer:
- IXFH20N85X
- Produsent:
- IXYS
- Detaljert beskrivelse:
- 850V/20A ULTRA JUNCTION X-CLASS.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - RF, Transistorer - JFET-er, Tyristorer - TRIAC, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - IGBT-er - singel, Transistorer - FET, MOSFET - En, Dioder - Zener - Arrays and Transistorer - FET, MOSFET - Arrays ...
- Konkurransefordel:
- We specialize in IXYS IXFH20N85X electronic components. IXFH20N85X can be shipped within 24 hours after order. If you have any demands for IXFH20N85X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFH20N85X Produktegenskaper
Delnummer :
IXFH20N85X
Produsent :
IXYS
Beskrivelse :
850V/20A ULTRA JUNCTION X-CLASS
Serie :
HiPerFET™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
850V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
330 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id :
5.5V @ 2.5mA
Gate Lading (Qg) (Max) @ Vgs :
63nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1660pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
540W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-247
Pakke / sak :
TO-247-3
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