IPP12CN10LGXKSA1 Priser (USD) [48206stk Lager]
- 1 pcs$0.77767
- 10 pcs$0.70324
- 100 pcs$0.56510
- 500 pcs$0.43952
- 1,000 pcs$0.34449
- Delnummer:
- IPP12CN10LGXKSA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 100V 69A TO220-3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Singel, Transistorer - FET, MOSFET - En, Dioder - RF, Dioder - Zener - Arrays, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Transistorer - Bipolar (BJT) - Arrays, Transistorer - JFET-er and Transistorer - FET, MOSFET - Arrays ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPP12CN10LGXKSA1 electronic components. IPP12CN10LGXKSA1 can be shipped within 24 hours after order. If you have any demands for IPP12CN10LGXKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPP12CN10LGXKSA1 Produktegenskaper
Delnummer :
IPP12CN10LGXKSA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 100V 69A TO220-3
Serie :
OptiMOS™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
69A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
12 mOhm @ 69A, 10V
Vgs (th) (Max) @ Id :
2.4V @ 83µA
Gate Lading (Qg) (Max) @ Vgs :
58nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
5600pF @ 50V
FET-funksjon :
-
Effektdissipasjon (maks) :
125W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
PG-TO220-3
Pakke / sak :
TO-220-3
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