TPN1R603PL,L1Q Priser (USD) [177661stk Lager]
- 1 pcs$0.21865
- 5,000 pcs$0.21756
- Delnummer:
- TPN1R603PL,L1Q
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- X35 PB-F POWER MOSFET TRANSISTOR.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - Arrays, Transistorer - JFET-er, Tyristorer - DIAC, SIDAC, Dioder - RF, Transistorer - FET, MOSFET - RF, Dioder - likerettere - matriser, Transistorer - Bipolar (BJT) - Arrays and Dioder - Zener - Arrays ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TPN1R603PL,L1Q electronic components. TPN1R603PL,L1Q can be shipped within 24 hours after order. If you have any demands for TPN1R603PL,L1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPN1R603PL,L1Q Produktegenskaper
Delnummer :
TPN1R603PL,L1Q
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
X35 PB-F POWER MOSFET TRANSISTOR
Serie :
U-MOSIX-H
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
1.6 mOhm @ 40A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 300µA
Gate Lading (Qg) (Max) @ Vgs :
41nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3900pF @ 15V
FET-funksjon :
-
Effektdissipasjon (maks) :
104W (Tc)
Driftstemperatur :
175°C
Monteringstype :
Surface Mount
Leverandørenhetspakke :
8-TSON Advance (3.3x3.3)
Pakke / sak :
8-PowerVDFN
Siste nytt
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