STW25N60M2-EP Priser (USD) [37938stk Lager]
- 1 pcs$1.03581
- 600 pcs$1.03066
- Delnummer:
- STW25N60M2-EP
- Produsent:
- STMicroelectronics
- Detaljert beskrivelse:
- MOSFET N-CHANNEL 600V 18A TO247.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - RF, Transistorer - Bipolar (BJT) - RF, Power Driver-moduler, Transistorer - IGBT-er - moduler, Transistorer - spesialformål, Transistorer - IGBT-er - singel, Transistorer - FET, MOSFET - En and Transistorer - Bipolar (BJT) - Arrays, pre-partisk ...
- Konkurransefordel:
- We specialize in STMicroelectronics STW25N60M2-EP electronic components. STW25N60M2-EP can be shipped within 24 hours after order. If you have any demands for STW25N60M2-EP, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STW25N60M2-EP Produktegenskaper
Delnummer :
STW25N60M2-EP
Produsent :
STMicroelectronics
Beskrivelse :
MOSFET N-CHANNEL 600V 18A TO247
Serie :
MDmesh™ M2-EP
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
188 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id :
4.75V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
29nC @ 10V
Vgs (maks) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
1090pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
150W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-247
Pakke / sak :
TO-247-3
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