SI4778DY-T1-GE3 Priser (USD) [12677stk Lager]
- 2,500 pcs$0.09710
- Delnummer:
- SI4778DY-T1-GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET N-CH 25V 8A 8-SOIC.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Bridge likerettere, Power Driver-moduler, Transistorer - IGBT-er - Arrays, Transistorer - Bipolar (BJT) - Singel, Tyristorer - SCR-er - moduler, Dioder - Zener - Singel, Tyristorer - SCR and Dioder - Variabel kapasitet (Varicaps, Varactors) ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SI4778DY-T1-GE3 electronic components. SI4778DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4778DY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4778DY-T1-GE3 Produktegenskaper
Delnummer :
SI4778DY-T1-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N-CH 25V 8A 8-SOIC
Serie :
TrenchFET®
Delstatus :
Obsolete
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
25V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
23 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
18nC @ 10V
Vgs (maks) :
±16V
Input Capacitance (Ciss) (Max) @ Vds :
680pF @ 13V
FET-funksjon :
-
Effektdissipasjon (maks) :
2.4W (Ta), 5W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
8-SO
Pakke / sak :
8-SOIC (0.154", 3.90mm Width)
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