IPDD60R190G7XTMA1 Priser (USD) [63114stk Lager]
- 1 pcs$0.61952
- Delnummer:
- IPDD60R190G7XTMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET NCH 650V 36A PG-HDSOP-10.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - Bipolar (BJT) - RF, Transistorer - IGBT-er - singel, Transistorer - Bipolar (BJT) - Arrays, Dioder - Zener - Singel, Transistorer - JFET-er, Dioder - Bridge likerettere and Tyristorer - SCR ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPDD60R190G7XTMA1 electronic components. IPDD60R190G7XTMA1 can be shipped within 24 hours after order. If you have any demands for IPDD60R190G7XTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPDD60R190G7XTMA1 Produktegenskaper
Delnummer :
IPDD60R190G7XTMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET NCH 650V 36A PG-HDSOP-10
Serie :
CoolMOS™ G7
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
190 mOhm @ 4.2A, 10V
Vgs (th) (Max) @ Id :
4V @ 210µA
Gate Lading (Qg) (Max) @ Vgs :
18nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
718pF @ 400V
FET-funksjon :
-
Effektdissipasjon (maks) :
76W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PG-HDSOP-10-1
Pakke / sak :
10-PowerSOP Module
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