IPP65R225C7XKSA1 Priser (USD) [32137stk Lager]
- 1 pcs$1.33532
- 10 pcs$1.20708
- 100 pcs$0.92036
- 500 pcs$0.71583
- 1,000 pcs$0.59311
- Delnummer:
- IPP65R225C7XKSA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 650V 11A TO-220-3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - singel, Transistorer - JFET-er, Power Driver-moduler, Transistorer - Bipolar (BJT) - Arrays, Dioder - likerettere - matriser, Transistorer - FET, MOSFET - RF, Transistorer - spesialformål and Transistorer - programmerbar enhet ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPP65R225C7XKSA1 electronic components. IPP65R225C7XKSA1 can be shipped within 24 hours after order. If you have any demands for IPP65R225C7XKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPP65R225C7XKSA1 Produktegenskaper
Delnummer :
IPP65R225C7XKSA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 650V 11A TO-220-3
Serie :
CoolMOS™ C7
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
650V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
225 mOhm @ 4.8A, 10V
Vgs (th) (Max) @ Id :
4V @ 240µA
Gate Lading (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
996pF @ 400V
FET-funksjon :
-
Effektdissipasjon (maks) :
63W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
PG-TO220-3
Pakke / sak :
TO-220-3
Siste nytt
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