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- Delnummer:
- TPC8022-H(TE12LQ,M
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET N-CH 40V 7.5A SOP8 2-6J1B.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - SCR, Transistorer - IGBT-er - Arrays, Dioder - Bridge likerettere, Transistorer - FET, MOSFET - En, Power Driver-moduler, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Dioder - Variabel kapasitet (Varicaps, Varactors) and Dioder - Zener - Singel ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TPC8022-H(TE12LQ,M electronic components. TPC8022-H(TE12LQ,M can be shipped within 24 hours after order. If you have any demands for TPC8022-H(TE12LQ,M, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPC8022-H(TE12LQ,M Produktegenskaper
Delnummer :
TPC8022-H(TE12LQ,M
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N-CH 40V 7.5A SOP8 2-6J1B
Serie :
-
Delstatus :
Obsolete
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
40V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
27 mOhm @ 3.8A, 10V
Vgs (th) (Max) @ Id :
2.3V @ 1mA
Gate Lading (Qg) (Max) @ Vgs :
11nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
650pF @ 10V
FET-funksjon :
-
Effektdissipasjon (maks) :
1W (Ta)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
8-SOP (5.5x6.0)
Pakke / sak :
8-SOIC (0.173", 4.40mm Width)
Siste nytt
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