IPB50R199CPATMA1 Priser (USD) [54961stk Lager]
- 1 pcs$0.71142
- 1,000 pcs$0.67987
- Delnummer:
- IPB50R199CPATMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 550V 17A TO-263.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - SCR, Dioder - likerettere - singel, Transistorer - IGBT-er - moduler, Transistorer - programmerbar enhet, Transistorer - JFET-er, Power Driver-moduler, Transistorer - Bipolar (BJT) - Arrays, pre-partisk and Tyristorer - DIAC, SIDAC ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPB50R199CPATMA1 electronic components. IPB50R199CPATMA1 can be shipped within 24 hours after order. If you have any demands for IPB50R199CPATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB50R199CPATMA1 Produktegenskaper
Delnummer :
IPB50R199CPATMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 550V 17A TO-263
Serie :
CoolMOS™
Delstatus :
Not For New Designs
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
550V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
199 mOhm @ 9.9A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 660µA
Gate Lading (Qg) (Max) @ Vgs :
45nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1800pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
139W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PG-TO263-3-2
Pakke / sak :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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