IRLR2908PBF Priser (USD) [48206stk Lager]
- 1 pcs$0.79857
- 10 pcs$0.70743
- 100 pcs$0.55900
- 500 pcs$0.43350
- 1,000 pcs$0.32374
- Delnummer:
- IRLR2908PBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 80V 30A DPAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Bridge likerettere, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - JFET-er, Tyristorer - DIAC, SIDAC, Power Driver-moduler, Transistorer - Bipolar (BJT) - Singel, Dioder - Zener - Singel and Tyristorer - SCR-er - moduler ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRLR2908PBF electronic components. IRLR2908PBF can be shipped within 24 hours after order. If you have any demands for IRLR2908PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRLR2908PBF Produktegenskaper
Delnummer :
IRLR2908PBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 80V 30A DPAK
Serie :
HEXFET®
Delstatus :
Discontinued at Digi-Key
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
80V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
28 mOhm @ 23A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
33nC @ 4.5V
Vgs (maks) :
±16V
Input Capacitance (Ciss) (Max) @ Vds :
1890pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
120W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
D-Pak
Pakke / sak :
TO-252-3, DPak (2 Leads + Tab), SC-63
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